Electronic properties of (2 × n)-Bi reconstructions on Si(100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference20 articles.
1. Symmetric arsenic dimers on the Si(100) surface
2. Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission studies
3. Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2×1-Sb
4. Sb-induced passivation of the Si(100) surface
5. Determination of a Bi-induced (1×1) structure of the Si(100) surface
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1. Energetic stability, equilibrium geometry, and electronic properties of Bi-inducedSi(001)−(2×n)surfaces;Physical Review B;2006-07-05
2. Stress relief from missing dimers on Bi/Si(001);Surface Science;2004-10
3. Core-level photoemission study of 2D ordered Bi/Si(100) interfaces;Surface Science;1999-06
4. Comparativeab initiopseudopotential studies of group V overlayers on Si(001);Journal of Physics: Condensed Matter;1998-09-07
5. Ab-initio density functional calculations for Si(001)/Bi(1ML)-(2×1);Surface Science;1998-05
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