Chemisorption of iodine on In- and Sb-terminated InSb(001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference26 articles.
1. FUNDAMENTAL STUDIES OF HALOGEN REACTIONS WITH III-V SEMICONDUCTOR SURFACES
2. Competition between continuous etching and surface passivation for Cl2chemisorption onto GaAs(100) c(8×2), GaAs(100) c(2×8), and GaAs(110) (1×1) surfaces
3. Passivation versus Etching: Adsorption ofI2on InAs(001)
4. Role of surface stoichiometry in the Cl2/GaAs(001) reaction
5. Site-Selective Reaction ofBr2with Second Layer Ga Atoms on the As-richGaAs(001)−2×4Surface
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Oxide Removal and Selective Etching of In from InSb(100) with TiCl4;The Journal of Physical Chemistry C;2011-09-22
2. Reconstruction dependence of the etching and passivation of the GaAs(001) surface;JETP Letters;2010-05
3. Magnetic and structural properties of Mn/InSb(001);Journal de Physique IV (Proceedings);2006-03
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