Difference between staying and diffusing Si adsorbates on the Si(111)7×7 surface-Reference-Cited by-同舟云学术

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Difference between staying and diffusing Si adsorbates on the Si(111)7×7 surface

Published:2003-06 Issue: Volume:532-535 Page:737-745
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Uchida Hironaga,Watanabe Satoshi,Kuramochi Hiromi,Kishida Masaru,Kim Jooyoung,Nishimura Kazuhiro,Inoue Mitsuteru,Aono Masakazu

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference23 articles.

1. Time-resolved observation of CVD-growth of silicon on Si(111) with STM

2. Step and kink dynamics on Au(110) and Pb(111) studied with a high-speed STM

3. Quantitative Measurements of Thermal Relaxation of Isolated Silicon Hillocks and Craters on the Si(111)-(7×7) Surface by Scanning Tunneling Microscopy

4. Atomistic Processes in the Early Stages of Thin-Film Growth

5. Mechanisms and energetics of site hopping and chemical reactions of O2 molecules at Si(111)-7 × 7 surfaces

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of strain and surface reconstruction on long-range diffusion of Ge atoms on Ge(111) surface;Physical Review B;2023-06-26

2. Structure of initial Ge nanoclusters at the edges of Si(1 1 1) steps with the front in the 〈−1 −1 2〉 direction;Journal of Crystal Growth;2014-10

3. Surface diffusion of Pb atoms on the Si(553)-Au surface in narrow quasi-one-dimensional channels;Physical Review B;2014-04-28

4. Adsorption and diffusion of atoms on the Si(335)–Au surface;Surface Science;2014-04

5. Anisotropic atom diffusion on Si(553)-Au surface;Physical Review B;2013-02-26

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