Effect of laser field and thermal stress on diffusion in laser doping of SiC-Reference-Cited by-同舟云学术

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Effect of laser field and thermal stress on diffusion in laser doping of SiC

Published:2007-12 Issue:20 Volume:55 Page:6816-6824
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Bet Sachin,Quick Nathaniel,Kar Aravinda

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Process technology for silicon carbide devices;Zetterling,2002

2. SiC technology;Neudeck,2000

3. Properties of silicon carbide;Harris,1995

4. Laser and electron beam processing of materials;White,1980

5. Laser processing and chemistry;Bäuerle,2002

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical investigation of laser doping parameters for semi-insulating 4H-SiC substrate;Journal of Laser Applications;2024-03-26

2. Laser doping of n-type 4H-SiC with boron using solution precursor for mid-wave infrared optical properties;Journal of Laser Applications;2024-01-08

3. Laser doping mechanism of 4H-SiC by KrF excimer laser irradiation using SiNx thin films;Japanese Journal of Applied Physics;2023-01-26

4. Gradually Fe-Doped Co₃O₄ Nanoparticles in 2-Propanol and Water Oxidation Catalysis with Single Laser Pulse Resolution;The Journal of Physical Chemistry C;2022-08-30

5. Gradually Fe-Doped Co₃O₄ Nanoparticles in 2-Propanol and Water Oxidation Catalysis with Single Laser Pulse Resolution;J PHYS CHEM C;2022

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