Strong composition dependence of resistive switching in Ba1-xSrxTiO3 thin films on semiconducting substrates and its thermodynamic analysis-Reference-Cited by-同舟云学术

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Strong composition dependence of resistive switching in Ba1-xSrxTiO3 thin films on semiconducting substrates and its thermodynamic analysis

Published:2018-04 Issue: Volume:148 Page:419-431
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Mohammadmoradi O.,Sen C.,Boni A.G.,Pintilie L.,Misirlioglu I.B.

Funder

COST

Core Program

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference52 articles.

1. Ferroelectric schottky diode;Blom;Phys. Rev. Lett.,1994

2. Asymmetric ferroelectricity and anomalous current conduction in heteroepitaxial BaTiO3 thin films;Abe;Jap. J. Appl. Phys. Part 1-Reg. Pap. Short Not. Rev. Pap.,1997

3. Polarization-controlled Ohmic to Schottky transition at a metal/ferroelectric interface;Liu;Phys. Rev. B,2013

4. Carrier accumulation near electrodes in ferroelectric films due to polarization boundary conditions;Misirlioglu;J. Appl. Phys.,2014

5. Polarization induced self-doping in epitaxial Pb(Zr0.20Ti0.80)O-3 thin films;Pintilie;Sci. Rep.,2015

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