Control of intrinsic defects and magnetotransport properties of Bi2Se3/c-sapphire epitaxial heterostructures
Author:
Publisher
Elsevier BV
Subject
Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. Structural and electronic properties of highly doped topological insulator Bi2Se3crystals
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5. Theoretical investigation of the evolution of the topological phase of Bi2Se3under mechanical strain
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1. Atomic-resolution analytical scanning transmission electron microscopy of topological insulators with a layered tetradymite structure;APL Materials;2020-07-01
2. Facile synthesis of high-crystalline Bi2Se3 nanoribbons without Se vacancies and their properties;Journal of Materials Science;2020-01-16
3. Production of large-area 2D materials for high-performance photodetectors by pulsed-laser deposition;Progress in Materials Science;2019-12
4. Structure and basal twinning of topological insulator Bi2Se3 grown by MBE onto crystalline Y3Fe5O12;Physical Review Materials;2019-06-25
5. The dimensional crossover of quantum transport properties in few-layered Bi2Se3 thin films;Nanoscale Advances;2019
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