Strain-tuning of transport gaps and semiconductor-to-conductor phase transition in twinned graphene-Reference-Cited by-同舟云学术

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Strain-tuning of transport gaps and semiconductor-to-conductor phase transition in twinned graphene

Published:2022-08 Issue: Volume:234 Page:117987
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Arca F.^ORCID,Mendez J.P.^ORCID,Ortiz M.^ORCID,Ariza M.P.

Funder

Junta de Andalucia Consejeria de Transformacion Economica Industria Conocimiento y Universidades

Ministerio de Ciencia, Innovación y Universidades

Consejería de Economía, Innovación, Ciencia y Empleo, Junta de Andalucía

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference54 articles.

1. Measurement of the elastic properties and intrinsic strength of monolayer graphene;Lee;Science,2008

2. The rise of graphene;Geim;Nat. Mater.,2007

3. Quasiparticle band gap engineering of graphene and graphone on hexagonal boron nitride substrate;Kharche;Nano Lett.,2011

4. Massive dirac fermions and hofstadter butterfly in a van der Waals heterostructure;Hunt;Science,2013

5. Band gap opening of monolayer and bilayer graphene doped with aluminium, silicon, phosphorus, and sulfur;Denis;Chem. Phys. Lett.,2010

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