Microstructure and atomic order analyses in CoFeCrAl Heusler alloy thin films: Interpretation of spin gapless semiconductor-like transport properties

Author:

Chen Z.X.ORCID,Sakuraba Y.ORCID,Masuda K.ORCID,Xu X.D.,Kumara L.S.R.,Tajiri H.,Kotani Y.ORCID,Kushwaha V.,Perumal A.,Hono K.ORCID

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Precursory Research for Embryonic Science and Technology

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference51 articles.

1. Proposal for a new class of materials: Spin gapless semiconductors;Wang;Phys. Rev. Lett.,2008

2. Quantum magnetoresistance;Abrikosov;Phys. Rev. B.,1998

3. Realization of spin gapless semiconductors: The Heusler compound Mn 2CoAl;Ouardi;Phys. Rev. Lett.,2013

4. Search for spin gapless semiconductors: The case of inverse Heusler compounds;Skaftouros;Appl. Phys. Lett.,2013

5. Mn2 CoZ (Z=Al,Ga,In,Si,Ge,Sn,Sb) compounds: Structural, electronic, and magnetic properties;Liu;Phys. Rev. B,2008

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