Fabrication and structure modulation of high-aspect-ratio porous GaAs through anisotropic chemical etching, anodic etching, and anodic oxidation-Reference-Cited by-同舟云学术

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Fabrication and structure modulation of high-aspect-ratio porous GaAs through anisotropic chemical etching, anodic etching, and anodic oxidation

Published:2013-11 Issue: Volume:110 Page:393-401
ISSN:0013-4686
Container-title:Electrochimica Acta
language:en
Short-container-title:Electrochimica Acta

Author:

Ono Sachiko,Kotaka Shunsuke,Asoh Hidetaka

Funder

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT)

Publisher

Elsevier BV

Subject

Electrochemistry,General Chemical Engineering

Reference34 articles.

1. Fabrication of multiple concentric nanoring structures;Somaschini;Nano Letters,2009

2. GaAs MESFET with a high-mobility self-assembled planar nanowire channel;Fortuna;IEEE Electron Device Letters,2009

3. Recent advances in solar cells based on one-dimensional nanostructure arrays;Yu;Nanoscale,2012

4. Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures;Hasegawa;Electrochimica Acta,2005

5. Electromechanical phenomena in semiconductor nanostructures;Lew;Journal of Applied Physics,2011

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1. Metal-assisted chemical etching beyond Si: applications to III–V compounds and wide-bandgap semiconductors;Nanoscale;2024

2. Self-organized porous semiconductor compounds;Encyclopedia of Condensed Matter Physics;2024

3. Anodizing—Pursuing the Wonder of Anodic Oxidation—;Denki Kagaku;2022-12-05

4. Evolution of Pore Growth in GaAs in Transitory Anodization Regime from One Applied Voltage to Another;Surface Engineering and Applied Electrochemistry;2021-03

5. Porous semiconductor compounds;Semiconductor Science and Technology;2020-09-07

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