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Electrochemically etched pores and wires on smooth and textured GaAs surfaces

  • Published:2011-05 Issue:14 Volume:56 Page:5071-5079
  • ISSN:0013-4686
  • Container-title:Electrochimica Acta
  • language:en
  • Short-container-title:Electrochimica Acta

Author:

Li Xiaopeng,Guo Zhongyi,Xiao Yanjun,Um Han-Don,Lee Jung-Ho

Funder

the Pioneer Research Center Program

Nano R&D Program

the National Research Foundation (NRF)

the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP)

Publisher

Elsevier BV

Subject

Electrochemistry,General Chemical Engineering

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-organized porous semiconductor compounds;Encyclopedia of Condensed Matter Physics;2024

2. Evolution of Pore Growth in GaAs in Transitory Anodization Regime from One Applied Voltage to Another;Surface Engineering and Applied Electrochemistry;2021-03

3. Porous semiconductor compounds;Semiconductor Science and Technology;2020-09-07

4. Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires;Beilstein Journal of Nanotechnology;2020-06-29

5. Free-Standing Large-Area Nanoperforated Gold Membranes Fabricated by Hopping Electrodeposition;ECS Journal of Solid State Science and Technology;2020-01-08
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