Copper deposition onto silicon by galvanic displacement: Effect of Cu complex formation in NH4F solutions
Author:
Publisher
Elsevier BV
Subject
Electrochemistry,General Chemical Engineering
Reference30 articles.
1. Synthesis and Characterization of Porous Platinum Layers Deposited on Highly Doped n-Type Porous Silicon by Immersion Plating
2. Selective Metal Deposition on Silicon Substrates
3. Metallization and nanostructuring of semiconductor surfaces by galvanic displacement processes
4. Selective metallization of silicon micromechanical devices
5. Use of Electroless Plating Copper Thin Films for Catalysis
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1. Light-assisted synthesis of copper/cuprous oxide reinforced nanoporous silicon microspheres with boosted anode performance for lithium-ion batteries;Electrochimica Acta;2021-08
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4. Deposition mechanism of aluminum on uranium in AlCl3-1-ethyl-3-methylimidazolium chloride ionic liquid by galvanic displacement;Journal of Applied Electrochemistry;2018-05-17
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