Concentration Profiles of Diffused Dopants in Silicon-Reference-Cited by-同舟云学术

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Concentration Profiles of Diffused Dopants in Silicon

Published:1981 Issue: Volume: Page:315-442
ISSN:0167-790X
Container-title:Impurity Doping Processes in Silicon
language:
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Author:

FAIR RICHARD B.

Publisher

Elsevier

Reference210 articles.

1. Semiconductor Silicon 1977;Dutton,1977

2. Mathematics of Diffusion;Crank,1956

3. Introduction to Diffusion in Semiconductors;Tuck,1974

4. Diffusion in Solids;Schewman,1963

5. J. R. Manning, Diffusion Kinetics for Atoms in Crystals (Van Nostrand, 1968).

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