1. Repetitively pulsed metal-ion beams for ion-implantation;Adler;Nuclear Instruments and Methods in Physics Research Section B,1985
2. Reduction of transient diffusion from 1–5keV Si+ ion implantation due to surface annihilation of interstitials;Agarwal;Applied Physics Letters,1997
3. Junction profiles of sub-keV ion implantation for deep sub-quarter micron devices;Al-Bayati;Conference on Ion Implantation Technology 2000 Proceedings,2000
4. Theory of high-field electron-transport and impact ionization in silicon dioxide;Arnold;Physical Review B,1994
5. Time-resolved reflectivity of ion-implanted silicon during laser annealing;Auston;Applied Physics Letters,1978