Fingerprints of relaxor ferroelectrics: Characteristic hierarchical domain configurations and quantitative performances-Reference-Cited by-同舟云学术

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Fingerprints of relaxor ferroelectrics: Characteristic hierarchical domain configurations and quantitative performances

Published:2020-12 Issue: Volume:21 Page:100789
ISSN:2352-9407
Container-title:Applied Materials Today
language:en
Short-container-title:Applied Materials Today

Author:

Bian Jihong,Xue Pan,Zhu Ren,Wang Lei,Yang Bian,Li Tao,Hu Qingyuan,Shen Lvkang,Wang Jianwei,Lu Guanghao,Yang Yaodong

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Changjiang Scholars and Innovative Research Team in University

Central Universities

Publisher

Elsevier BV

Subject

General Materials Science

Reference47 articles.

1. Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials;Grinberg;Nature,2013

2. High‐performance relaxor ferroelectric materials for energy storage applications;Zhao;Adv. Energy Mater,2019

3. Transparent ferroelectric crystals with ultrahigh piezoelectricity;Qiu;Nature,2020

4. The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals;Li;Nat. Commun,2016

5. Giant piezoelectricity of Sm-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals;Li;Science,2019

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1. Large-strain bismuth titanate sodium-based piezoelectric ceramics with enhanced temperature stability;Journal of Alloys and Compounds;2024-10

2. Influence of the Molar Ratio Sr : Bi : Ta in Strontium Bismuth Tantalate Films SryBi2 + xTa2O9 on Structure and Electrophysical Properties;Bulletin of the Russian Academy of Sciences: Physics;2024-05

3. Engineering Domain Variants in 0.7Pb(Mg_1/3Nb_2/3)−0.3PbTiO₃ Single Crystals Using High‐Frequency AC Poling;Small Methods;2024-03-21

4. Bottom Electrode Effects on Piezoelectricity of Pb(Zr0.52,Ti0.48)O3 Thin Film in Flexible Sensor Applications;Materials;2023-12-01

5. Varied domain structures in 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ single crystals;Microstructures;2023-12-01

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