Ferromagnetic semiconductor Ge1−x−ySnxMnyTe with phase transformation of ferroelectric type-Reference-Cited by-同舟云学术

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Ferromagnetic semiconductor Ge1−x−ySnxMnyTe with phase transformation of ferroelectric type

Published:2009-06 Issue:11 Volume:321 Page:1782-1784
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Lashkarev G.V.,Sichkovskyi V.I.,Radchenko M.V.,Slynko V.E.,Slynko E.I.,Story T.,Dobrowolski W.,Knoff W.,Osmanov T.Sh.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Ferromagnetic and ferroelectric phase transitions in IV-VI semiconductors

2. Hot wall growth and properties of lead telluride films doped by germanium and gallium

3. Electrical resistivity of Mn-doped SnTe crystals at low temperature

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solid state phase equilibria in the Te-rich region of the RE (RE=Ce, Nd and Pr)–Sn–Te ternary systems;Journal of Alloys and Compounds;2010-02

2. Studies of Diluted Magnetic Semiconductor Sn1-x-y-zGexMnyGdzTe;Acta Physica Polonica A;2009-11

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