Semiconducting antiferromagnetism in MgH 2 doped with 3 d transition metals: A first-principles view-Reference-Cited by-同舟云学术

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Semiconducting antiferromagnetism in MgH 2 doped with 3 d transition metals: A first-principles view

Published:2017-11 Issue: Volume:441 Page:799-805
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Lu Yi-Lin,Dong Shengjie,Zhou Wei,Liu Yanyu,Zhao Hui,Wu Ping

Funder

National Natural Science Foundation of China

Key Program of Tianjin Natural Science Foundation

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. Pixel switching of epitaxial Pd/YHx/CaF2 switchable mirrors

2. Interaction of hydrogen with metal nitrides and imides

3. Hydrogen-storage materials for mobile applications

4. Hydride electronics

5. Semiconducting hydrides

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical prediction of C- and O-doped Hittorf’s violet phosphorene as bipolar magnetic semiconductor material;Acta Physica Sinica;2024

2. Exploring the Hydrogen Storage Performance of MgH₂ Catalyzed by Two Transition Metals Ni and Co by In‐situ Calorimetry and Density Functional Theory Calculations;ChemistrySelect;2023-12-10

3. First-principles study of Pd single-atom catalysis to hydrogen desorption reactions on MgH2(110) surface;Chinese Journal of Chemical Physics;2019-06

4. Effects of Native Vacancies on Nb-Doped MgH2 Using Density Functional Theory Calculations;The Journal of Physical Chemistry C;2018-11-10

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