Author:
Tellez-Mora A.,Fernandez-Escamilla H.N.,Ponce-Perez R.,Takeuchi Noboru,Guerrero-Sanchez J.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. Spin-transfer torque magnetic random access memory (stt-mram);Apalkov;JETC,2013
2. High-density magnetoresistive random access memory operating at ultralow voltage at room temperature;Jia-Mian;Nat. Commun.,2011
3. Toward a universal memory;Åkerman;Science,2005
4. A. Bette, J. DeBrosse, D. Gogl, H. Hoenigschmid, R. Robertazzi, C. Arndt, D. Braun, D. Casarotto, R. Havreluk, S. Lammers, W. Obermaier, W. Reohr, H. Viehmann, W.J. Gallagher, G. Muller, A High-speed 128Kbit MRAM Core for Future Universal Memory Applications, 2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408), 10.1109/VLSIC.2003.1221207.
5. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers;Parkin;Nat. Mater.,2004
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献