Fabrication of high performance 64kb MRAM-Reference-Cited by-同舟云学术

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Fabrication of high performance 64kb MRAM

Published:2004-05 Issue: Volume:272-276 Page:1941-1942
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Koh G.H.,Kim H.J.,Jeong W.C.,Oh J.H.,Park J.H.,Lee S.Y.,Jeong G.T.,Hwang I.J.,Kim T.W.,Lee J.E.,Kim H.J.,Park S.O.,Jeong U.I.,Jeong H.S.,Kim Kinam

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference2 articles.

1. M. Durlam, et al., A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with Copper Interconnects, 2002 Symposium on VLSI Circuits Digest of Technical Papers, 2002, pp. 158–161.

2. The science and technology of magnetoresistive tunneling memory

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