Spin transport of electrons and holes in a metal and in a semiconductor
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Theory of the perpendicular magnetoresistance in magnetic multilayers
2. Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
3. Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve
4. V. Zayets, arXiv:1410.7511, (2014);
5. Spin and charge transport in materials with spin-dependent conductivity
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1. Parametric mechanism of the magnetization reversal as a low-power recording mechanism for MRAM. Measurement of spin-accumulation-induced in-plane magnetic field in a FeB nanomagnet;Journal of Magnetism and Magnetic Materials;2024-01
2. WITHDRAWN: Parametric mechanism of the magnetization reversal as a low-power recording mechanism for MRAM. Measurement of spin-accumulation-induced in-plane magnetic field in a FeB nanomagnet;Journal of Magnetism and Magnetic Materials;2023-09
3. Limits of a rechargeable spin battery;Physical Review B;2022-12-07
4. Hall effect in ferromagnetic nanomagnets: Magnetic field dependence as evidence of inverse spin Hall effect contribution;Physical Review B;2020-09-11
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