Perpendicular STT_RAM cell in 8 nm technology node using Co1/Ni3(1 1 1)||Gr2||Co1/Ni3(1 1 1) structure as magnetic tunnel junction-Reference-Cited by-同舟云学术

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Perpendicular STT_RAM cell in 8 nm technology node using Co1/Ni3(1 1 1)||Gr2||Co1/Ni3(1 1 1) structure as magnetic tunnel junction

Published:2018-04 Issue: Volume:452 Page:10-16
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Varghani Ali,Peiravi Ali,Moradi Farshad

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Current-driven excitation of magnetic multilayers;Slonczewski;J. Magn. Magn. Mater.,1996

2. Magnetoresistive random access memory using magnetic tunnel junctions;Tehrani;Proc. IEEE,2003

3. Advances and future prospects of spin-transfer torque random access memory;Chen;IEEE Trans. Magn.,2010

4. Comparison of scaling of in-plane and perpendicular spin transfer switching technologies by micromagnetic simulation;Apalkov;IEEE Trans. Magn.,2010

5. Spin-transfer switching in MgO magnetic tunnel junction nanostructures;Huai;J. Magn. Magn. Mater.,2006

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1. Magnetic Semiconductors;Semiconductor Physics;2023

2. Magnetic Semiconductors;Semiconductor Physics;2022

3. [Co/Ni] multilayers with robust post-annealing performance for spintronics device applications;Journal of Physics D: Applied Physics;2018-10-05

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