Non-equilibrium character of resistive switching and negative differential resistance in Ga-doped Cr2O3 system
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference40 articles.
1. Resistive non-volatile memory devices (Invited Paper)
2. Mechanism for bipolar resistive switching in transition-metal oxides
3. Metal oxide memories based on thermochemical and valence change mechanisms
4. Emerging memories: resistive switching mechanisms and current status
5. Resistive switching in transition metal oxides
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Doping of large amount tetravalent Ge ions into Fe2O3 structure and experimental results on modified structural, optical and electronic properties;Materials Science in Semiconductor Processing;2024-02
2. Optical and electrical charge transport properties in metal (Sr, Ca, Zn, Cr, and Ga) doped M-type BaFe12O19 hexaferrite;AIP Conference Proceedings;2024
3. Temperature dependent electrical properties and conduction mechanism of Co and Ti Co-doped Fe2O3 system;AIP Conference Proceedings;2024
4. Structural phase stabilization of ce doped La2NiMnO6 double perovskite and its high temperature electrical conductivity;AIP Conference Proceedings;2024
5. Modifications in micro-structural, optical, and electrical properties of polycrystalline α-Al2O3 by 100 MeV Ag9+ ion beam irradiation;Radiation Physics and Chemistry;2023-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3