Spin-valves with modified synthetic antiferromagnets exhibiting an enhanced bias point control capability at submicrometer dimensions-Reference-Cited by-同舟云学术

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Spin-valves with modified synthetic antiferromagnets exhibiting an enhanced bias point control capability at submicrometer dimensions

Published:2004-08 Issue:1 Volume:279 Page:L1-L4
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Park Jeong-Suk,Lee Seong-Rae,Kim Young Keun

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Spin-valve RAM cell

2. Spin-valves with bias compensation layer

3. Spin valves with antiparallel-pinned flux compensation layer

4. 12 Gb/in/sup 2/ recording demonstration with SV read heads and conventional narrow pole-tip write heads

5. Computer simulation of switching characteristics in magnetic tunnel junctions exchange-biased by synthetic antiferromagnets

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