Quantum landau levels in n-type modulation-doped GaAs/AlGaAs coupled double quantum wells-Reference-Cited by-同舟云学术

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Quantum landau levels in n-type modulation-doped GaAs/AlGaAs coupled double quantum wells

Published:2024-10 Issue: Volume:608 Page:172406
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Jaouane M.^ORCID,Ed-Dahmouny A.^ORCID,Fakkahi A.,Arraoui R.,Azmi H.,Sali A.,El Sayed M.E.^ORCID,Samir A.

Funder

King Khalid University

Publisher

Elsevier BV

Reference16 articles.

1. Doping in heterostructures, quantum wells, and superlattices;Schubert,1993

2. Self-consistent analysis of Si δ-doped layer placed in a non-central position in GaAs structure;Osvald;Physica E,2004

3. Complex free-carrier profile synthesis by ”atomic-plane” doping of MBE GaAs;Wood;J. Appl. Phys.,1980

4. Long-lived nanosecond spin coherence in high-mobility 2DEGs confined in double and triple quantum wells;Ullah;J. Appl. Phys.,2016

5. Optimizing well doping density for GaAs/AlGaAs p -type quantum well infrared photodetectors;Shen;J. Appl. Phys.,1999

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