Correlation between defect and magnetism of low energy Ar+9 implanted and un-implanted Zn0.95Mn0.05O thin films suitable for electronic application-Reference-Cited by-同舟云学术

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Correlation between defect and magnetism of low energy Ar+9 implanted and un-implanted Zn0.95Mn0.05O thin films suitable for electronic application

Published:2016-06 Issue: Volume:408 Page:217-227
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Neogi S.K.,Midya N.,Pramanik P.,Banerjee A.,Bhattacharyya A.,Taki G.S.,Krishna J.B.M.,Bandyopadhyay S.

Funder

DST-Government of India

CRNN, University of Calcutta

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Ferromagnetic semiconductors

2. Magnetization dependence on carrier doping in epitaxial ZnO thin films co-doped with Mn and P

3. A threshold of Vo+/Vo++ to room temperature ferromagnetism of hydrogenated Mn doped ZnO nanoparticles

4. Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO

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