Carrier spin polarization in ferromagnet–semiconductor (Ga,Mn)As/GaAs structures
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Mn Interstitial Diffusion in(Ga,Mn)As
2. (Ga,Mn)As as a digital ferromagnetic heterostructure
3. Growth control, structure and ferromagnetic properties of digital Mn/GaAs heterostructures
4. Anisotropic distribution of stacking faults in (Ga,Mn)As digital ferromagnetic heterostructures grown by low-temperature molecular-beam epitaxy
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2. InGaAs/GaAs LIGHT-EMITTING DIODES WITH FERROMAGNETIC DELTA-DOPED LAYERS;Physics, Chemistry and Applications of Nanostructures;2013-06
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4. Growth of Gd-doped InGaN/GaN multiple quantum wells and their characterization;physica status solidi (c);2011-05-13
5. First-principles studies of interlayer exchange coupling in (Ga, Mn)As-based diluted magnetic semiconductor multilayers;Journal of Applied Physics;2010-09
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