The origin and control of the sources of AMR in (Ga,Mn)As devices-Reference-Cited by-同舟云学术

The origin and control of the sources of AMR in (Ga,Mn)As devices

Published:2009-04 Issue:8 Volume:321 Page:1001-1008
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Rushforth A.W.,Výborný K.,King C.S.,Edmonds K.W.,Campion R.P.,Foxon C.T.,Wunderlich J.,Irvine A.C.,Novák V.,Olejník K.,Kovalev A.A.,Sinova Jairo,Jungwirth T.,Gallagher B.L.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. XIX. On the electro-dynamic qualities of metals:—Effects of magnetization on the electric conductivity of nickel and of iron

2. Die Abhängigkeit des Widerstandes von Nickelkristallen von der Richtung der spontanen Magnetisierung

3. Temperature and angular dependence of the anisotropic magnetoresistance in epitaxial Fe films

4. First-Principles Theory of Spontaneous-Resistance Anisotropy and Spontaneous Hall Effect in Disordered Ferromagnetic Alloys

5. Anisotropic magnetoresistance in ferromagnetic 3d alloys

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