Low write current and strong durability in high-speed spintronics memory (spin-Hall MRAM and VoCSM) through development of a shunt-free design process and W spin-Hall electrode-Reference-Cited by-同舟云学术

Low write current and strong durability in high-speed spintronics memory (spin-Hall MRAM and VoCSM) through development of a shunt-free design process and W spin-Hall electrode

Published:2019-12 Issue: Volume:491 Page:165536
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Kato Yushi,Yoda Hiroaki,Inokuchi Tomoaki,Shimizu Mariko,Ohsawa Yuichi,Fujii Keiko,Yoshiki Masahiko,Oikawa Soichi,Shirotori Satoshi,Koi Katsuhiko,Shimomura Naoharu,Altansargai Buyandalai,Sugiyama Hideyuki,Kurobe Atsushi

Funder

Japan Science and Technology Agency

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

2. Evidence for reversible control of magnetization in a ferromagnetic material by means of spin–orbit magnetic field

3. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

4. Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO

5. A spin–orbit torque switching scheme with collinear magnetic easy axis and current configuration

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