An SOI thermal-diffusivity-based temperature sensor with ±0.6°C (3σ) untrimmed inaccuracy from −70°C to 225°C

Author:

van Vroonhoven C.P.L.,Makinwa K.A.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. A CMOS smart temperature sensor with a batch-calibrated inaccuracy of ±0.25°C (3σ) from −70°C to 130°C;Aita;IEEE ISSCC Dig. Tech. Papers,2009

2. ADT7312 specifications, Analog Devices, available online through http://www.analog.com.

3. [95172LM] specifications, National Semiconductor, available online through http://www.national.com.

4. A temperature-to-digital converter based on an optimized Electrothermal Filter;Kashmiri;IEEE J. Solid State Circuits,2009

5. The effect of substrate doping on the behaviour of a CMOS electrothermal frequency-locked-loop;Zhang;Dig. Transducers 2007,2007

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1. A Current and Temperature Limiting System in a 7-nm Hexagon™ Compute Digital Signal Processor;IEEE Journal of Solid-State Circuits;2021-03

2. A resistive sensing and dual-slope ADC based smart temperature sensor;Analog Integrated Circuits and Signal Processing;2016-03-04

3. An Energy-Efficient All-Digital Time-Domain-Based CMOS Temperature Sensor for SoC Thermal Management;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2015-08

4. A Time-Domain Band-Gap Temperature Sensor in SOI CMOS for High-Temperature Applications;IEEE Transactions on Circuits and Systems II: Express Briefs;2015-05

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