Author:
Takao Hidekuni,Ina Fumie,Douzaka Toshiaki,Sawada Kazuaki,Ishida Makoto
Subject
Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. High temperature leakage current suppression in CMOS integrated circuits;Nordquist;Electron. Lett.,1989
2. W.A. Krull, J.C. Lee, Demonstration of the benefits of SOI for high temperature operation, in: Proceedings of the IEEE SOS/SOI Technology Workshop, 1988, p. 69.
3. High-temperature pressure sensor using double SOI structure with two Al2O3 films;Lee;Sens. Actuators A,1994
4. J.P. Eggermont, B. Gentinne, D. Flandre, P.G.A. Jespers, J.P. Colinge, SOI-CMOS operational amplifiers for applications up to 300 °C, in: Proceedings of the Conference on Transactions of the Second International High Temperature Electronics, North Carolina, 5–19 June 1994, vol 2, pp. 21–26.
5. High temperature CMOS integrated circuits for sensor signal processing using SDB-SOI wafers;Matsumoto;IEE Japan Transactions,1997