Ultra high performance planar InGaAs PIN photodiodes for high speed optical fiber communication-Reference-Cited by-同舟云学术

Ultra high performance planar InGaAs PIN photodiodes for high speed optical fiber communication

Published:2007-01 Issue:1 Volume:133 Page:9-12
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Chang Shiuan-Ho,Fang Yean-Kuen,Ting Shyh-Fann,Chen Shih-Fang,Lin Chun-Yue,Wu Cheng-Yi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference9 articles.

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2. W.-J. Ho, M.-C. Wu, Y.M. Lin, InGaAs pin photodiodes grown by liquid-phase epitaxy using erbium gettering, IEE Electron. Lett. 30 (1) (1994) 83–84.

3. Elements of Optoelectronics Fiber Optics;Chin-Lin,1996

4. High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors;Tan;IEEE Photon. Technol. Lett.,1994

5. Semiconductor Device for Optical Communications;Smith,1980

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