Modifying residual stress and stress gradient in LPCVD Si3N4 film with ion implantation-Reference-Cited by-同舟云学术

Modifying residual stress and stress gradient in LPCVD Si3N4 film with ion implantation

Published:2006-08 Issue: Volume:130-131 Page:352-357
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Shi Wendian,Zhang Haixia,Zhang Guobing,Li Zhihong

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

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4. Influence of deposition conditions on mechanical properties of low-pressure chemical vapor deposited low-stress silicon nitride films;Toivola;J. Appl. Phys.,2003

5. Control of internal stress and Young's modulus of Si3N4 and polycrystalline silicon thin films using the ion implantation technique;Tabata;Appl. Phys. Lett.,1990

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