Absolute etch rates in alkaline etching of silicon (111)-Reference-Cited by-同舟云学术

Absolute etch rates in alkaline etching of silicon (111)

Published:2010-11 Issue:1-2 Volume:164 Page:154-160
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Shah I.A.,van Enckevort W.J.P.,Vlieg E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. Surface versus bulk micromachining: the contest for suitable applications;French;J. Micromech. Microeng.,1998

2. Electrochemistry and microsystems;Ehrfeld;Electrochim. Acta,2003

3. Advanced sacrificial poly-Si technology for fluidic systems;Berenschot;J. Micromech. Microeng.,2002

4. Anisotropy in the wet-etching of semiconductors;Kelly;Curr. Opin. Solid State Mater. Sci.,2005

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