Fabrication and characteristics of the suppressed sidewall injection magnetotransistor using a CMOS process-Reference-Cited by-同舟云学术

Fabrication and characteristics of the suppressed sidewall injection magnetotransistor using a CMOS process

Published:2006-08 Issue: Volume:130-131 Page:99-104
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Song Youn-Gui,Ryu Ji-Goo,Choi Young-Shig,Kim Nam-Ho

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference9 articles.

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2. P. Malcovati, R. Castagneti, H. Baltes, C. Azeredo Leme, F. Maloberi, Switched capacitor dual-collector magnetotransistors, IEEE International Symposium on Circuits and Systems, ISCAS’94, 1994, vol. 5, 1994, 595–598.

3. A lateral magnetotransistor structure with linear response to the magnetic field;Ristic;IEEE Trans. Electron. Dev.,1989

4. A magnetotransistor structure with offset elimination;Ristic;Sens. Mater.,1988

5. Sensor Technology and Devices;Ristic,1994

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