Intrinsic limits of the sensitivity of CMOS integrated vertical Hall devices-Reference-Cited by-同舟云学术

Intrinsic limits of the sensitivity of CMOS integrated vertical Hall devices

Published:2009-05 Issue:1 Volume:152 Page:21-28
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Pascal Joris,Hébrard Luc,Frick Vincent,Kammerer Jean-Baptiste,Blondé Jean-Philippe

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference17 articles.

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2. The vertical Hall-effect device;Popovic;IEEE Electron Device Letters,1984

3. Parallel-field Hall microsensors: an overview;Roumenin;Sensors and Actuators A,1992

4. Magnetic sensors continue to advance towards perfection;Roumenin;Sensors and Actuators A,1995

5. First fully CMOS-integrated 3D Hall probe;Kejik,2005

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