A single-pole double-throw (SPDT) circuit using lateral metal-contact micromachined switches-Reference-Cited by-同舟云学术

A single-pole double-throw (SPDT) circuit using lateral metal-contact micromachined switches

Published:2005-05 Issue:1 Volume:121 Page:187-196
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Tang M.,Liu A.-Q.,Agarwal A.,Liu Z.-S.,Lu C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. A novel resonant-type GaAs SPDT switch IC with low distortion characteristics for 1.9 GHz personal handy-phone system;Kawakyu,1996

2. A 6–18GHz 20W SPDT switch using shunt discrete PIN diodes;Shigematsu,1997

3. MEMS single-pole double-throw (SPDT) X and K-band switching circuits;Pacheco,2001

4. Ka-band single-pole double-throw (SPDT) switch for switched line phase shifters;Scardelletti,2002

5. MEMS-based switched diversity antenna at 2.3GHz for automotive applications;Sievenpiper,2002

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