Current-induced recrystallization of polycrystalline silicon nano thin films deposited at different temperatures and its influences on piezoresistive sensitivity and temperature coefficients-Reference-Cited by-同舟云学术

Current-induced recrystallization of polycrystalline silicon nano thin films deposited at different temperatures and its influences on piezoresistive sensitivity and temperature coefficients

Published:2010-08 Issue:2 Volume:162 Page:284-290
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Shi Chang-zhi,Liu Xiao-wei,Chuai Rong-yan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. The influence of thickness on piezoresistive properties of poly-Si nanofilms;Liu,2006

2. Piezoresistive sensitivity, linearity and resistance time drift of polysilicon nanofilms with different deposition temperatures;Shi;Sensors,2009

3. A 5-bits precision CMOS bandgap reference with on-chip bi-directional resistance trimming;Ekekwe,2008

4. Silicon-chromium thin-film resistor reliability;Waits;Thin Solid Films,1973

5. Downward laser trimming of thick film resistors;Narayana;IEEE Trans. Compon. Hybrids Manuf. Technol.,1991

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect formation processes in the silicon nanoparticles under the neutron irradiation;Modern Physics Letters B;2019-09-20

2. Piezoresistivity of polycrystalline silicon applying the AIC process-route;Sensors and Actuators A: Physical;2011-12

3. Piezoresistive Sensitivity and Al Ohmic Contact of Highly Doped Polycrystalline Silicon Nano Thin Films;Key Engineering Materials;2011-06