Liquid gate dielectric field effect transistor for a radiation nose-Reference-Cited by-同舟云学术

Liquid gate dielectric field effect transistor for a radiation nose

Published:2012-08 Issue: Volume:182 Page:1-5
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Han Jin-Woo,Meyyappan M.,Ahn Jae-Hyuk,Choi Yang-Kyu

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference13 articles.

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4. RADFET: a review of the use of metal–oxide–silicon devices as integrating dosimeters;Holmes-Siedle;Radiation Physics and Chemistry,1986

5. High-performance p-type independent-gate FinFET;Fried;IEEE Electron Device Letters,2004

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