Low temperature sintering behavior of B2O3 vapor in BaTiO3-based PTCR thermistors-Reference-Cited by-同舟云学术

Low temperature sintering behavior of B2O3 vapor in BaTiO3-based PTCR thermistors

Published:2004-10 Issue:2 Volume:116 Page:215-218
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Qi Jianquan,Chen Wanping,Wang Hangyao,Wang Yu,Li Longtu,Chan Helen Lai Wah

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Effects of B2O3 addition on the dielectric and ferroelectric properties of Ba0.7Sr0.3TiO3 ceramics;Rhim;J. Am. Ceram. Soc,2000

2. Grain boundary and its related properties of boron added Y-doped BaTiO3 ceramics;Lee;Solid State Ionics,1977

3. Vapor doping method, a new effective method used in BaTiO3 based PTCR ceramics;Qi;J. Inorgan. Mater,1999

4. Improvement of the PTCR effect in Ba1−xSrxTiO3 semiconducting ceramics by doping of Bi2O3 vapor during sintering;Qi;J. Am. Ceram. Soc,1998

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