Local bond rupture of Si atoms on Si(111)-(2×1) induced by the surface π–π∗ excitation-Reference-Cited by-同舟云学术

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Local bond rupture of Si atoms on Si(111)-(2×1) induced by the surface π–π∗ excitation

Published:2009-05 Issue:9 Volume:603 Page:L63-L65
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Inami E.,Tanimura K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference19 articles.

1. Semiconductor Surfaces and Interfaces;Mönch,1995

2. Laser-Induced Electronic Bond Breaking and Desorption of Adatoms on Si(111)-(7×7)

3. Translational Energy Distribution of Si Atoms Desorbed by Laser-Induced Electronic Bond Breaking of Adatoms onSi(111)−(7×7)

4. Femtosecond Laser-Induced Disorder of the (1×1)-Relaxed GaAs(110) Surface

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of Electronic-Excitation-Induced Structural Modification of Carbon-Based Nanomaterials with that of Semiconductor Surfaces;Nano;2016-06

2. Excitation-induced germanium quantum dot formation on Si(100)-(2×1);Journal of Applied Physics;2010-08

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