Instability of steps during Ga deposition on Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference22 articles.
1. Wavelength Selection in Unstable Homoepitaxial Step Flow Growth
2. Stability-Instability Transitions in Silicon Crystal Growth
3. Morphological instability of atomic steps observed on Si(111) surfaces
4. Diffusion barrier caused by1×1and7×7on Si(111) during phase transition
5. Step wandering induced by homoepitaxy on Si() during “1×1”–7×7 phase transition
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