Formation of a √3×√3 surface on Si/Ge(111) studied by STM and LEED
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference7 articles.
1. COMPLEX BEHAVIORS AT SIMPLE SEMICONDUCTOR AND METAL/SEMICONDUCTOR SURFACES
2. Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth
3. Thin epitaxial Ge−Si(111) films: Study and control of morphology
4. Atomic dynamics and structure of the Ge(111)c(2×8) surface
5. Do we know the true structure of Ge(111)c(2×8)?
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