Electronic characterization of a single dangling bond on n- and p-type Si(001)-(2 × 1):H-Reference-Cited by-同舟云学术

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Electronic characterization of a single dangling bond on n- and p-type Si(001)-(2 × 1):H

Published:2016-03 Issue: Volume:645 Page:88-92
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Kawai Hiroyo,Neucheva Olga,Yap Tiong Leh,Joachim Christian,Saeys Mark

Funder

A*STAR's VIP Atom Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference32 articles.

1. Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms

2. Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope

3. Scalable Patterning of One-Dimensional Dangling Bond Rows on Hydrogenated Si(001)

4. Quantum engineering at the silicon surface using dangling bonds

5. Atomic scale fabrication of dangling bond structures on hydrogen passivated Si(001) wafers processed and nanopackaged in a clean room environment

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1. Doping-induced spin polarization on the pristine Si surface: a Si(5 5 12)2 × 1 case;Journal of the Korean Physical Society;2024-08-22

2. Investigating Si (100) surface patterns as well as electrical states through integrating molecular dynamics simulations with density functional tight binding at atomic level;Materials Today Communications;2024-06

3. Atomically Precise Manufacturing of Silicon Electronics;ACS Nano;2024-02-20

4. Effects of dopant type and concentration on surface recombination velocity in hydrogen-terminated silicon;Japanese Journal of Applied Physics;2022-08-19

5. Dangling bonds on the Cl- and Br-terminated Si(100) surfaces;Applied Surface Science;2022-07

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