Formation of the incommensurate Si(111)-∼5.4 × ∼5.4-In surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference34 articles.
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3. Surface-state electrical conductivity at a metal-insulator transition on silicon;Tanikawa;Phys. Rev. Lett.,2004
4. Direct evidence of the charge ordered phase transition of indium nanowires on Si(111);Park;Phys. Rev. Lett.,2004
5. Atomic and electronic structure of the (4×1) and (8×2) In/Si(111) surfaces;Tsay;Phys. Rev. B,2005
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tunneling electron induced luminescence from indium films on Si(111);Physical Review B;2024-06-10
2. The 7×3-In surface reconstruction consisting of triple layer on the Si(111) surface;Surface Science;2024-03
3. Moiré superlattice and two-dimensional free-electron-like states of indium triple-layer structure on Si(111);Physical Review B;2023-07-31
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