Theoretical study of the initial stages of Ba growth on Si(100) substrate
Author:
Funder
Uniwersytet Warszawski
Interdyscyplinarne Centrum Modelowania Matematycznego i Komputerowego UW
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference27 articles.
1. Comment on “Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100)”;Kocan;Phys. Rev. B,2006
2. Defects on the Si(100)-2×1 surface: anchoring sites of the surface polymerization reaction of In atoms;Kocan;Phys. Rev. B,2008
3. Influence of C-defect at Si(001) surface on the adsorption of Al, Ag and Pb atoms;Pieczyrak;Appl. Surf. Sci.,2014
4. Passivation of III-V semiconductor surfaces;Besselov;Semiconductors,1998
5. Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination;Sieber;Appl. Phys. Lett.,2001
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