Ultra-thin oxide growth on silicon during 10keV x-ray irradiation-Reference-Cited by-同舟云学术

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Ultra-thin oxide growth on silicon during 10keV x-ray irradiation

Published:2015-05 Issue: Volume:635 Page:49-54
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Bhandaru S.,Zhang E.X.,Fleetwood D.M.,Reed R.A.,Weller R.A.,Harl R.R.,Rogers B.R.,Weiss S.M.

Funder

Defense Threat Reduction Agency (DTRA)

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference26 articles.

1. A summary review of displacement damage from high energy radiation in silicon semiconductors and semiconductor devices

2. Effects of ionizing radiation on oxidized silicon surfaces and planar devices

3. Gamma Irradiation of Silicon. III. Levels in p‐Type Material

4. Review of displacement damage effects in silicon devices

5. Accelerated Oxidation of Silicon Due to X-ray Irradiation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High energy irradiation effects on silicon photonic passive devices;Optics Express;2022-01-24

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