Interaction between Sm and GaN––a photoemission study-Reference-Cited by-同舟云学术

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Interaction between Sm and GaN––a photoemission study

Published:2004-02 Issue:1-2 Volume:551 Page:132-142
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Guziewicz E.,Kowalski B.J.,Orlowski B.A.,Szczepanska A.,Golacki Z.,Kowalik I.A.,Grzegory I.,Porowski S.,Johnson R.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference27 articles.

1. Multiple color capability from rare earth-doped gallium nitride

2. Visible cathodoluminescence of GaN doped with Dy, Er, and Tm

3. Ion implantation of rare earth ions for light emitters

4. Suppression of rare-earth implantation-induced damage in GaN

5. Spectroscopic properties of Sm3+(4f 5) in GaN

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fano resonance photoemission study of Sm on Pb0.97Ge0.03Te crystal;Radiation Physics and Chemistry;2020-10

2. The fundamental surface science of wurtzite gallium nitride;Surface Science Reports;2017-09

3. AlN interlayer to improve the epitaxial growth of SmN on GaN (0001);Journal of Crystal Growth;2016-09

4. DFT study of electronic and structural properties of Sm:GaN;Computational Materials Science;2014-06

5. Gd and Sm on clean semiconductor surfaces—Resonant photoemission studies;Applied Surface Science;2013-10

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