Synthesis of hafnium nitride films by 0.5–5 keV nitrogen implantation of metallic Hf: an X-ray photoelectron spectroscopy and factor analysis study
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference42 articles.
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4. Zirconium nitride—a new material for Josephson junctions
5. Electronic structure ofHfN0.93(100) studied by angle-resolved photoemission
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