Si nanostripe formation on vicinal Ge(100) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century
2. Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. DISSOCIATION OF B2H6 AND ADSORPTION OF THE FRAGMENTS OF B2H6 ON THE STEPPED Ge(100) SURFACE;Surface Review and Letters;2012-06
2. Vicinal surfaces for functional nanostructures;Journal of Physics: Condensed Matter;2008-12-01
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