Characterization of ZrB2(0001) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth-Reference-Cited by-同舟云学术

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Characterization of ZrB2(0001) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth

Published:2006-04 Issue:7 Volume:600 Page:1439-1449
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Armitage R.,Suda J.,Kimoto T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference22 articles.

1. Interstitial Alloys,1967

2. Boron and Refractory Borides,1977

3. Heteroepitaxial growth of group-III nitrides on lattice-matched metal boride ZrB2 (0001) by molecular beam epitaxy

4. ZrB2Substrate for Nitride Semiconductors

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1. Decomposition of ammonia on ZrB2(0001);Chemical Physics Letters;2020-01

2. The Effects of Annealing Temperature on the Structural Properties of ZrB2 Films Deposited via Pulsed DC Magnetron Sputtering;Coatings;2019-04-16

3. Epitaxial Silicene: Beyond Silicene on Silver Substrates;Silicene;2016

4. Cubic Zirconia Crystalline Surface Oxide Epitaxial Formation on ZrB₂(0001) Confirmed by Circularly-Polarized-Light Photoelectron Diffraction;e-Journal of Surface Science and Nanotechnology;2015

5. Dissociative adsorption of hydrogen on the ZrB2(0001) surface;Surface Science;2012-12

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