Electronic structures of Ga-induced incommensurate and commensurate overlayers on the Si(111) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference38 articles.
1. Instability and Charge Density Wave of Metallic Quantum Chains on a Silicon Surface
2. Metal-Insulator Transition in Au Atomic Chains on Si with Two Proximal Bands
3. Mechanism of Gap Opening in a Triple-Band Peierls System: In Atomic Wires on Si
4. Coexistence of Two Different Peierls Distortions within an Atomic Scale Wire: Si(553)-Au
5. Doping of a surface band onSi(111)3×3−Ag
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1. Gallenene epitaxially grown on Si(1 1 1);2D Materials;2018-04-16
2. STM study of the Ga thin films grown on Si(111) surface;Surface Science;2017-09
3. Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy;Frontiers of Physics;2015-02
4. Effective mass of a two-dimensional √3 × √3 Ga single atomic layer on Si(111);Surface Science;2014-12
5. Extra metal adatom surface diffusion simulation on 1/3 ML Si(111) $\sqrt {3}\times \sqrt {3}$ metal-induced surfaces;Physica Scripta;2013-08-22
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